1 July 2017, Volume 7, Issue 7, pp. 2141-2696
54 articles
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Transition-metal-doped II-VI semiconductor materials enable high power lasers in the mid-infrared range and combine superb ultra-fast laser capabilities with high nonlinearity and polycrystalline microstructures that provide random quasi-phase matching. A femtosecond polycrystalline Cr:ZnS and Cr:ZnSe laser with a flexible design was developed by the authors; this figure shows the microstructure of polycrystalline Cr:ZnS, which is optimized for high SFH output. See Vasilyev et al. Opt. Mater. Express 7, 2636-2650 (2017).
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