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Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields

Hyunik Park, Byung-Jae Kim, and Jihyun Kim

Open Access Open Access

Abstract

We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs on sapphire substrate were coated with SiO2 nanospheres, followed by inductively-coupled plasma etch to create nanorod-shapes with MQWs, which were transferred to the pre-patterned SiO2/Si wafer. This method allowed us to obtain nanorod LEDs with uniform length, diameter and qualities. Dielectrophoretic force created by non-uniform electric field was very effective at positioning the processed nanorods on the pre-patterned contacts. After aligned by non-uniform electric field, we observed bright EL from many nanorods, which had both cases (p-GaN/MQWs/n-GaN or n-GaN/MQWs/p-GaN). Therefore, bright ELs at different locations were observed under the various bias conditions.

©2012 Optical Society of America

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Supplementary Material (1)

Media 1: MOV (257 KB)     

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Figures (5)
Fig. 1
Fig. 1 Fabrication process (1) Deposition of SiO2 nanospheres on LED structure by spin-coating (2) ICP etch (3) Dispersion of nanorods (4) Positioning the nanorods by DEP.

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Fig. 2
Fig. 2 (a) SEM image (b) CL image of the nanorods (c) CL spectrum from the nanorods.

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Fig. 3
Fig. 3 (a) Microscopic image and (b) SEM image around the metal electrode after DEP force was applied.

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Fig. 4
Fig. 4 (a) I-V characteristics (Inset: schematic image after DEP) (b) EL image when the negative bias was applied to the top circular electrode. Note that the nanorods that emit EL are under forward bias condition.

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Fig. 5
Fig. 5 (a) I-V characteristics (Inset: schematic image after DEP) (b) EL image when the positive bias was applied to the top circular electrode (Media 1). Note that the nanorods that emit EL are under forward bias condition.

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