Abstract
Graphene/semiconductor heterojunction-based photodetectors are expected to achieve high performance in various wavelength regions. Graphene photogated diodes (GPDs) based on such heterojunctions are promising for the fabrication of high-performance photodetectors, which cannot be achieved using conventional technologies. However, their action mechanism has not yet been theoretically demonstrated. In this study, we investigated the mechanism of GPDs with and without an interfacial layer. We demonstrated that the thin interfacial native oxide layer is responsible for the reduction in the Fermi level induced by photogating, which is similar to “photoswitching.” This effect induces an extraordinarily large output current in GPDs with a barrier layer.
© 2023 Optica Publishing Group
Full Article | PDF ArticleMore Like This
Amir Hossein Mehrfar and Abdollah Eslami Majd
Appl. Opt. 62(5) 1160-1166 (2023)
Masaaki Shimatani, Takashi Ikuta, Yuri Sakamoto, Shoichiro Fukushima, Shinpei Ogawa, and Kenzo Maehashi
Opt. Mater. Express 12(2) 458-467 (2022)
Shoichiro Fukushima, Satoru Fukamachi, Masaaki Shimatani, Kenji Kawahara, Hiroki Ago, and Shinpei Ogawa
Opt. Mater. Express 12(5) 2090-2101 (2022)