Abstract
We analyze high-order harmonic generation in a disordered semiconductor. The semiconductor is simulated through a one-dimensional two-band tight-binding Hamiltonian. We neglect both Coulomb interaction between electrons and electron–phonon interactions. The disorder is modeled using a site diagonal potential in the context of the Anderson model of disorder. We show that, when a moderate amount of disorder is present in the semiconductor, the resultant high-order harmonics spectra present clean peaks corresponding to odd harmonics of the frequency of the driving laser field. Our results suggest that disorder is a probable cause for the well-resolved high-harmonic generation spectra observed in experiments.
© 2018 Optical Society of America
Full Article | PDF ArticleMore Like This
Gianfranco Orlando, Tak-San Ho, and Shih-I Chu
J. Opt. Soc. Am. B 36(7) 1873-1882 (2019)
Gianfranco Orlando, Tak-San Ho, and Shih-I Chu
J. Opt. Soc. Am. B 37(5) 1540-1549 (2020)
Graham G. Brown, Álvaro Jiménez-Galán, Rui E. F. Silva, and Misha Ivanov
J. Opt. Soc. Am. B 41(6) B40-B46 (2024)