Abstract
We examined the electromagnetic responses of near-infrared metamaterials consisting of split-ring resonators fabricated on GaInAs semiconductor layers with different doping levels on an InP substrate. The inductance-capacitance (LC) resonances of the split-ring resonators could be controlled entirely from 52 to 63 THz by changing the carrier concentrations from to . Our results show the feasibility of semiconductor-based tunable metamaterials.
© 2012 Optical Society of America
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