Abstract
We report a hybrid organic light-emitting device (HOLED) with an inorganic hole transport layer (HTL) of silicon-rich silicon oxide (), whose mobility can be tunable by changing the degree of excess silicon x. The structure of the HOLED is designed as indium tin oxide/ ()/ buffer/ AlQ ()/ Bphen: ()/ Sm ()/ Au (). When x is equal to 3.7, the corresponding mobility of is about , which is close to that of AlQ, and this HOLED has achieved a maximum current efficiency of at , which is even higher than that of the typical organic light-emitting device having NPB as an HTL.
© 2010 Optical Society of America
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