Abstract
A cross-waveguide resonator structure is proposed for silicon electro-optic modulators operating around the near-infrared (NIR) communication wavelength of . The device is modeled based on a silicon-on-insulator wafer with a compact surface area of and the modulation is achieved by resonance peak shift caused by carrier injection-based refractive index perturbation. It is shown via numerical study that the modulation speed of the device hits and frequency around , while the DC power consumption is only . An optimum modulation depth of was found after tuning the optical confinement of the cavity.
© 2009 Optical Society of America
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