Abstract
The linear and nonlinear properties of Si thin films upon Si wafers made by the use of laser ablation are presented. The linear absorption of the films clearly showed a peak at 9.8 µm (1020 cm-1), whereas the peak at 9.04 µm (1070 cm-1) from the asymmetric Si—O—Si vibration mode was absent. Raman spectroscopy data show a typical 4-cm-1 downshift with respect to the Si line. The nonlinear measurements were performed with a tunable free-electron laser. The nonlinear absorption at was measured to be approximately 2, 25, and 5 times larger than the nonlinear absorption at and respectively.
© 1999 Optical Society of America
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