Abstract
Theoretical analysis for different active layer structures is performed
to minimize the laser threshold current of the ultraviolet GaN/AlGaN multiple-quantum-well
laser diodes by using advanced device simulation. The simulation results show
that the lower threshold current can be obtained when the number of quantum
wells is two or three and the aluminum composition in the barrier layer is
about 10%–12%. This result is attributed to several different effects
including electron leakage current, nonuniform carrier distribution, interface
charge density induced by spontaneous and piezoelectric polarization, and
optical confinement factor. These internal physical mechanisms are investigated
by theoretical calculation to analyze the effects of quantum-well number and
different aluminum compositions in barrier layer on laser threshold properties.
Furthermore, the effect of quantum-well thickness is discussed as well. It
is found that the optimal quantum-well thickness is about 3 nm due to the
balance of the advantages of a large confinement factor against the disadvantages
of significant quantum-confined Stark effect (QCSE).
© 2008 IEEE
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