Abstract
This paper presents a new driving scheme utilizing an
in-pixel metal-insulator-semiconductor (MIS) photosensor for luminance control
of active-matrix organic light-emitting diode (AMOLED) pixel. The proposed
3-TFT circuit is controlled by an external driver performing the signal readout,
processing, and programming operations according to a luminance adjusting
algorithm. To maintain the fabrication simplicity, the embedded MIS photosensor
shares the same layer stack with pixel TFTs. Performance characteristics of
the MIS structure with a
${{nc}}{{--}}{{Si}}:{{H}}/a{{-}}{{Si}}:{{H}}$
bilayer absorber were measured and analyzed to prove the concept.
The observed transient dark current is associated with charge trapping at
the insulator–semiconductor interface that can be largely eliminated
by adjusting the bias voltage during the refresh cycle. Other factors limiting
the dynamic range and external quantum efficiency are also determined and
verified using a small-signal model of the device. Experimental results demonstrate
the feasibility of the MIS photosensor for the discussed driving scheme.
© 2013 IEEE
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