Abstract
The band structure of dilute-As GaNAs alloy with the As composition range from 0%
to 12.5% is studied by using First-Principle density-functional calculation. Our
analysis shows that the dilute-As GaNAs alloy exhibits the direct band gap properties.
The dilute-As GaNAs alloy shows a band gap range from 3.645 eV down to 2.232 eV with As
content varying from 0% to 12.5%, which covers the blue and green spectral regime. This
finding indicates the alloy as a potential candidate for photonic devices applications.
The bowing parameter of 14.5 eV ± 0.5 eV is
also obtained using line fitting with the First-Principle and experimental data. The
effective masses for electrons and holes in dilute-As GaNAs alloy, as well as the
split-off energy parameters, were also presented. Minimal interband Auger recombination
is also suggested for the dilute-As GaNAs alloy attributing to the off-resonance
condition for this process.
© 2013 IEEE
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