Abstract
The performance of InGaN/GaN multiple quantum wells (MQWs) blue light-emitting
diodes (LEDs) was improved by inserting a thin Mg-delta-doped hole injection
layer at the end of the MQWs. The forward- and reverse-leakage currents were
significantly reduced compared with those of the LEDs without the inserting
layer. The light output power was enhanced by 13% at a 350 mA injection current.
The improved performance could be ascribed to the dislocation suppression
and hole concentration enhancement in the p-type GaN by inserting the Mg-delta-doped
structure.
© 2013 IEEE
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