Abstract
We demonstrate the optoelectrical characteristics of thick well short-period
InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with H<sub>2</sub> in
GaN barrier spacer layer. Introducing ramped H<sub>2</sub> in the GaN barrier spacer
layer creates a wide range of severe well thickness variation randomly distributed
in the thick InGaN well. The thickness-fluctuated InGaN well would effectively
increase the carrier concentration in the region of the thick InGaN well region
during the current injection. Moreover, the ramped H<sub>2</sub> in GaN barrier spacer layer would
improve the interface and crystal quality of thick well short-period InGaN/GaN
MQWs LEDs. Therefore, compared with traditional long-period InGaN/GaN MQW
LEDs, thick well short-period InGaN/GaN MQW LEDs with fluctuated InGaN well
thickness enhance output power (25.6% at 20 mA) and improve efficiency droop
from 55.0% to 36.7%.
© 2012 IEEE
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