Abstract
The large off-state drain–source leakage current
of the thin-film transistor (TFT) in active-matrix electrophoretic display
(AMEPD) may cause severe crosstalk and long pixel refresh time. Multiple-gate
amorphous silicon TFT (a-Si TFT) is a common use to overcome this issue. In
this paper, we show that the leakage current of multiple-gate a-Si TFT can
be computed from the $I$–$V$ characteristics of a single
TFT by an analytical current model. The predicted leakage currents show good
agreement with the expected values in SPICE simulation. This model is also
applicable for the multiple-gate a-Si TFTs used in other high voltage driven
devices.
© 2008 IEEE
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