Abstract
Large off-state drain–source current of the thin-film transistor
(TFT) in active-matrix electrophoretic display (AMEPD) pixel leads to dramatic
data voltage degradation, which causes severe crosstalk and undesired large
response time. In this paper, the leakage current influence on response time
is investigated and simulated. A compact model of response time $t$ versus off-state drain–source current $I _{\rm off}$ is established. The
simulation result induces that by reducing $I _{\rm off}$, the response time can be efficiently
shorted. In order to reduce the off-state current, dual-gate amorphous silicon
(a-Si:H) TFT with a common gate structure is discussed. Its current regulation
mechanism is illustrated, and its fitness for driving the AMEPD pixel is explained.
The SPICE simulation results prove that except reducing the crosstalk, dual-gate
a-Si TFT can also significantly short the response time by cutting down the
off-state current under the operation conditions of AMEPD application, while
insignificantly reduces the on-state current.
© 2007 IEEE
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