Abstract
Polymeric organic light-emitting diodes (PLEDs) were fabricated by solution
process, and their stress tolerance were studied by continually pressing the
PLEDs fabricated on polymeric substrates. Two types of host materials, poly(n-
vinylcarbazole) (PVCz) and starburst small-molecule 1,3,5- tris[4-(diphenylamino)phenyl]
benzene (TDAPB) were employed as host for the PLEDs doped with phosphorescent
materials. Two iridium complexes are employed as dopants, fac-tris(2-phenyl-
pyridine) iridium [Ir(ppy)<sub>3</sub>] and tris(1-phenylisoquinoline) iridium (III) [Ir(piq)<sub>3</sub>] for green-emitting and red-emitting phosphorescent materials, respectively. The external quantum
efficiency and power efficiency were 8.2% and 17.3 lm/W, and 6.3% and 3.0
lm/W for a device with Ir(ppy)<sub>3</sub> doped TDAPB and Ir(piq)<sub>3</sub> doped PVCz-TDAPB mixture host, respectively. Pushing tolerance tests were performed for PLEDs fabricated on polymeric substrates. The device
continued to emit light after a pushing test consisting of more than 20 000
steps. In this paper, we discuss the fabrication and characteristics of PLEDs
prepared using starburst TDAPB and phosphorescent materials for green and
red emissive materials by a solution process. We discuss the pushing tolerance
for PLEDs fabricated on a polymeric substrate.
© 2007 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription