Abstract
In this work, a technology computer-aided design (TCAD) device
model based on an fabricated amorphous InGaZnO thin-film transistor
(a-IGZO TFT) was established to study the correlation between carrier
concentration distribution, current–voltage (I–V) and capacitance–voltage (C–V) characteristics of a-IGZO TFTs. The equilibrium carrier
concentration of the a-IGZO layer influenced by defect states, interface
fixed charges, gate and S/D electrodes were studied systematically
and quantitatively. The a-IGZO thickness was varied from 10 nm to
140 nm. The doping concentration in the bulk a-IGZO layer and source/drain
(S/D) contact regions were changed from
${{10}}^{10}~{{cm}}^{-3}$
to
${{10}}^{20}~{{cm}}^{-3}$
. The physical mechanisms underlying the I–V and C–V variation caused by above-mentioned
parameters were explored by analyzing the energy band diagram and
carrier concentration distribution in the a-IGZO layer. The total
number of electrons in the channel region of the TFT was calculated
by numeric integration for further investigation of its correlation
with the a-IGZO thickness, I–V, and C–V characteristics of the a-IGZO TFTs.
© 2015 IEEE
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