Abstract
Electrohydrodynamic (EHD) jet-printed indium-zinc-oxide thin-film
transistors (TFTs) were prepared at various annealing temperatures. The EHD
jet was achieved by optimizing the process parameters; such as the precursor
viscosity, driving voltages, and substrate temperatures. The EHD jet-printed
IZO films were characterized using a range of analytical methods. Metal
oxide formation was confirmed by X-ray photoelectron spectroscopy. The EHD
jet-printed IZO TFTs showed good electrical properties: a mobility of 4.8
cm
$^{2}/{{V}}\cdot{{s}}$
, a threshold
voltage of 8.4 V, an on-to-off current ratio of
${{10}}^{7}$
, and a subthreshold slope of 1.2 V/dec at 400
$^{\circ}$
C.
The positive and negative bias stability were also analyzed.
© 2015 IEEE
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