Abstract
The highly magnesium (Mg)-doped wide-bandgap AlGaN electron
blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes
(LEDs) for electron leakage suppression. However, the EBL also reduces
the hole injection efficiency and high Mg doping in AlGaN is a challenging.
In this work, InGaN/GaN LEDs with a graded-composition AlGaN last
quantum barrier and without the conventional AlGaN electron blocking
layer were proposed and investigated numerically. Using the proposed
structure, the optical output power and the efficiency droop are improved
significantly when compared with the corresponding properties of conventional
LEDs. The simulation results indicate that these improvements can
be attributed to increments in both the electron confinement and the
hole injection efficiency because of the appropriate energy band structure
design of the LEDs.
© 2015 IEEE
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