Abstract
In this study, we propose an amorphous InGaZnO
(a-IGZO) thin-film transistors (TFTs) based on homojunctioned structure
and investigate the modification of source/drain (SD) region effect
on device performance. It is shown that conductive characteristic
of the SD contact fabricated by self-aligning through bask-side exposure
does rest upon the following passivation deposition procedure. By
optimizing the passivation architecture through plasma-enhanced chemical
vapor deposition (PECVD), TFT panel with homojunctioned structure
possesses excellent uniformity, negligible short-channel effect, and
outstanding stability against environmental storage and thermal/light
electrical stress. Owning to its easy fabrication and prominent performance,
we firmly believe in the competitiveness of homojunctioned TFT in
the future matrix backplanes.
© 2015 IEEE
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