Abstract
In this study, GaN-based blue light-emitting diodes (LEDs) with
an electron retarded layer (ERL) were investigated and demonstrated.
The external quantum efficiency (EQE) and efficiency droop effect
can be effectively improved by introducing the ERL which was attributed
to the retard of the electrons rejected into the multiple quantum
wells (MQWs). Therefore, the electron overflow effect can be effectively
suppressed and carrier distribution can become more uniform in the
MQWs. Regarding the thermal effect, the hot-cold factors of LEDs with
ERL can achieve a better performance due to the carrier uniform distribution
in the MQWs, which is not easily influenced by the temperature. On
the other hand, the temperature dependence of the electroluminescence
(EL) of LEDs with ERL also can exhibit a better property especially
at lower temperature.
© 2015 IEEE
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