Abstract
Single-grain (SG) Si TFTs were fabricated from sputtered
a-Si to achieve high performance TFTs on a polyimide substrate using a low
temperature (350
$^{\circ}{{C}}$
) process including
$\mu$
-Czochralski crystallization. The carrier mobility is 309
${{cm}}^{2}/{{V}}\cdot{{s}}$
and 126
${{cm}}^{2}/{{V}}\cdot{{s}}$
for electrons and holes, respectively. The devices are also successfully
transferred to a flexible polyethylene naphyhalate (PEN) foil.
© 2014 IEEE
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