Abstract
Here, we present a study of the effective piezoelectric constant (e14e) temperature dependence in strained [111]-oriented zinc-blende quantum wells (QWs) embedded within a semiconductor optical amplifier (SOA). We determined e14e using a method that was insensitive to the segregation phenomenon and to the temperature dependence of the bandgap energy, which required neither fitting parameters nor temperature-dependent expressions for energy and out-of-plane effective masses of electrons and heavy holes. An e14e=−0.0534±0.0040 C · m−2 at 23°C was obtained for an SOA with 1.2 nm [111]-oriented strained In0.687Ga0.313As/In0.807Ga0.193As0.304P0.696 QWs. Unlike previously published research, where e14e magnitude increased as temperature rised, we extracted an e14e magnitude that decreased as temperature increased.
© 2023 Chinese Laser Press
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