Abstract
The electron and heavy hole energy levels of two vertically coupled
InAs hemispherical quantum dots/wetting layers embedded in a GaAs barrier
are calculated numerically. As the radius increases, the electronic
energies increase for the small base radii and decrease for the larger
ones. The energies decrease as the dot height increases. The intersubband
and interband transitions of the system are also studied. For both, a
spectral peak position shift to lower energies is seen due to the vertical
coupling of dots. The interband transition energy decreases as the dot
size increases, decreases for the dot shapes with larger heights, and
reaches a minimum for coupled semisphere dots.
© 2016 Chinese Laser Press
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