Abstract
A population inversion study of GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As three-quantum-well quantum cascade
structures is presented. We derive the population inversion condition (PIC) of the active region
(AR) and discuss the PICs on different structures by changing structural parameters such as the
widths of quantum wells or barriers in the AR. For some instances, the PIC can be simplified and is
proportional to the spontaneous emission lifetime between the second and the first excited states,
whereas some other instances imply that the PIC is proportional to the state lifetime of the second
excited state.
© 2013 Chinese Optics Letters
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