Abstract
Different electro-optic effects, such as Kerr effect, Pockels effect induced
by the electric field or strain, and plasma dispersion effect exist in silicon.
Experimentally distinguishing these effects is necessary for designing silicon-based
electro-optic devices. According to their different polarization dependencies and
frequency responses, these effects are measured and distinguished successfully via a
transverse electro-optic modulation experiment based on the near-intrinsic silicon
sample. The results indicate that Pockels effect induced by the electric field or
strain is primary among these effects in the near-intrinsic silicon sample.
© 2012 Chinese Optics Letters
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