Abstract
GaInAs/AlGaAs comprehensive-strained three-quantum-well lasers with
asymmetric waveguide are designed and optimized. With this design, the optical field
in the transverse direction is extended, and a semiconductor laser with large spot
is obtained. For a 300-μm cavity length and 100-μm aperture device under
continuous wave (CW) operation, the measured vertical and horizontal far-field
divergence angles are 12.2° and 3.0°, respectively. The slope efficiency is 0.44 W/A
and the lasing wavelength is 917 nm. The equivalent transverse spot size is 3 \mu m
for the fundamental transverse mode, which is a sufficiently large value for the
purpose of coupling and manipulation of light.
© 2012 Chinese Optics Letters
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