Demetrios N. Christodoulides,1
Iam Choon Khoo,2
Gregory J. Salamo,3
George I. Stegeman,1,*
and Eric W. Van Stryland1
1College of Optics and Photonics, Center for Research in Optics and Lasers, University of Central Florida, 4000 Central Florida Boulevard, Orlando, Florida 32816, USA
2Department of Electrical Engineering, 121 Electrical Engineering East, Pennsylvania State University, University Park, Pennsylvania 16802, USA
3Department of Physics, University of Arkansas, 226 Physics Building, 825 West Dickson Street, Fayetteville, Arkansas 72701, USA
Demetrios N. Christodoulides, Iam Choon Khoo, Gregory J. Salamo, George I. Stegeman, and Eric W. Van Stryland, "Nonlinear refraction and absorption: mechanisms and
magnitudes," Adv. Opt. Photon. 2, 60-200 (2010)
We provide an in-depth treatment of the various mechanisms by which an incident light
beam can produce an intensity- or flux-dependent change in the refractive index and
absorption coefficient of different materials. Whenever possible, the mechanisms are
initially traced to single-atom and -molecule effects in order to provide physical
understanding. Representative values are given for the various mechanisms. Nine
different mechanisms are discussed, starting with the Kerr effect due to atoms and/or
molecules with discrete states, including organic materials such as molecules and
conjugated polymers. Simplified two and/or three-level models provide useful
information, and these are summarized. The nonlinear optics of semiconductors is
reviewed for both bulk and quantum-confined semiconductors, focusing on the most
common types II–VI and III–V. Also discussed in some detail are the
different nonlinear mechanisms that occur in liquid crystals and photorefractive
media. Additional nonlinear material systems and mechanisms such as glasses,
molecular reorientation of single molecules, the electrostrictive effect, the nuclear
effect (vibrational contributions), cascading, and the ever-present thermal effects
are quantified, and representative tables of values are given.
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Ordered according to bandgap energy, , or cutoff wavelength, taken from [8] except where noted. The values quoted were obtained by
using multiple pulse widths in order to isolate the Kerr response. See the
references for details. Blank cells indicate no measurement at this
wavelength.
Table 2
Kerr and Nonlinear Absorption (Where Available) Coefficients for a Selection of
Conjugated Polymers in Thin Film Form
Random orientation of linear molecular axis.
Percentage in PMMA fiber.
Estimated from solution measurements in chloroform.
SBAC dye in PMMA (a D-A-D structure) .
Here τ is the singlet state lifetime. In CAP and SiNc,
much of the population goes to the triplet state in this time where it can
strongly absorb as opposed to the ground state for the polymethine.
Table 6
Measured in Fused Silica at from Various Suppliers [83]
Sample Source
Suprasil
3.2
Schott SQ1
2.5
Heraeus
3.5
Herasil
3.3
Table 7
Comparison of Measured and Calculated Based on Eq. (3.2)
Fused Silica
BK7
SF6
68
64
25
1.46
1.52
1.81
Theory
Experiment
Table 8
Parameters Needed for Carrier-Related Nonlinearities in Selected Semiconductorsa
Ordered according to bandgap energy, , or cutoff wavelength, taken from [8] except where noted. The values quoted were obtained by
using multiple pulse widths in order to isolate the Kerr response. See the
references for details. Blank cells indicate no measurement at this
wavelength.
Table 2
Kerr and Nonlinear Absorption (Where Available) Coefficients for a Selection of
Conjugated Polymers in Thin Film Form
Random orientation of linear molecular axis.
Percentage in PMMA fiber.
Estimated from solution measurements in chloroform.
SBAC dye in PMMA (a D-A-D structure) .
Here τ is the singlet state lifetime. In CAP and SiNc,
much of the population goes to the triplet state in this time where it can
strongly absorb as opposed to the ground state for the polymethine.
Table 6
Measured in Fused Silica at from Various Suppliers [83]
Sample Source
Suprasil
3.2
Schott SQ1
2.5
Heraeus
3.5
Herasil
3.3
Table 7
Comparison of Measured and Calculated Based on Eq. (3.2)
Fused Silica
BK7
SF6
68
64
25
1.46
1.52
1.81
Theory
Experiment
Table 8
Parameters Needed for Carrier-Related Nonlinearities in Selected Semiconductorsa