Abstract
We present a silicon wire grid polarizer operating down to a wavelength of 300 nm. Besides metallic grating materials, semiconductors also offer appropriate material properties to realize wire grid polarizers in the ultraviolet (UV) spectral range. The presented polarizer with a period of 140 nm was realized by means of electron beam lithography and dry etching using amorphous silicon as the grating material. At a wavelength of 365 nm, a transmission of 42% and an extinction ratio of 90 (19.5 dB) are measured. The spectral bandwidth of these polarizers in the UV-spectral range is about 100 nm.
© 2014 Optical Society of America
Full Article | PDF ArticleMore Like This
Kosuke Asano, Satoshi Yokoyama, Atsushi Kemmochi, and Toyohiko Yatagai
Appl. Opt. 53(13) 2942-2948 (2014)
Thomas Weber, Thomas Käsebier, Michael Helgert, Ernst-Bernhard Kley, and Andreas Tünnermann
Appl. Opt. 51(16) 3224-3227 (2012)
Itsunari Yamada and Rei Yoshida
Appl. Opt. 59(18) 5570-5575 (2020)