Abstract
We studied the structure and optical properties of multilayer systems. Using extended x-ray absorption fine structure measurements at the Y and Mo K-edge, the structure of the subnanometer thick Y layer and the underlying Mo layer were analyzed. It was found that even a 0.2 nm thick Y layer significantly reduced silicon diffusion toward Mo, thus reducing Mo silicide formation. Hard x-ray reflectometry showed that the difference in average interface roughness of the multilayer structure compared to Mo/Si and multilayer structures was negligible. Soft x-ray reflectometry showed optical improvement of with respect to Mo/Si and multilayer structures.
© 2012 Optical Society of America
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