Abstract
Gradient-based phase-shifting mask (PSM) optimization methods have emerged as an important tool in computational lithography to solve for the inverse lithography problem under the thin-mask assumption, where the mask is considered a thin two-dimensional object. As the critical dimension printed on the wafer shrinks into the subwavelength regime, thick-mask effects become prevalent and thus these effects must be taken into account in PSM optimization methods. Thick-mask effects are particularly aggravated and pronounced in etching profiles with abrupt discontinuities and trench depths. PSM methods derived under the thin-mask assumption have inherent limitations and perform poorly in the subwavelength scenario. This paper focuses on developing three-dimensional PSM optimization methods that can overcome the thick-mask effects in lithography systems with partially coherent illumination. The boundary layer model is exploited to simplify and characterize the thick-mask effects, leading to a gradient-based PSM optimization method. Several illustrative simulations are presented.
© 2011 Optical Society of America
Full Article | PDF ArticleMore Like This
Xu Ma and Gonzalo R. Arce
J. Opt. Soc. Am. A 26(7) 1687-1695 (2009)
Yihua Pan and Xu Ma
Opt. Express 30(12) 21282-21294 (2022)
Xu Ma and Gonzalo Arce
J. Opt. Soc. Am. A 25(12) 2960-2970 (2008)