Abstract
A method for aligning a photolithographic mask at the top of a transparent wafer that has a pattern on its bottom side is presented. The method is based on optical self-imaging of special alignment marks and provides submicrometer accuracy. The method is simple and robust and can conveniently be implemented on laboratory mask aligners for contact or proximity printing.
© 2001 Optical Society of America
Full Article | PDF ArticleMore Like This
Michael W. Farn, Jonathan S. Kane, and William Delaney
Appl. Opt. 31(34) 7295-7300 (1992)
Yannick Bourgin, Thomas Siefke, Thomas Käsebier, Pascal Genevée, Adriana Szeghalmi, Ernst-Bernhard Kley, and Uwe D. Zeitner
Opt. Express 23(13) 16628-16637 (2015)
Wangfu Chen, Wei Yan, Song Hu, Yong Yang, and Shaolin Zhou
Appl. Opt. 49(4) 708-713 (2010)