Abstract
Off-axis grating lenses and astigmatic grating lenses, designed for semiconductor laser wavelengths, have been fabricated by an electron-beam (EB) exposure system. High N.A. off-axis grating lenses with near-diffraction-limited operation were obtained. Grating lenses with a complex function, such as astigmatic lenses, are also available by EB lithography.
© 1985 Optical Society of America
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