Abstract
Measurements of writing sensitivity and theoretical projections of readout signal-to-noise ratio achievable for several magnetooptical materials and an amorphous semiconductor material are used to assess their storage density and data rate potential in a discrete bit recording system. Dynamic read/write experiments utilizing infrared GaAs lasers presently indicate a density limit of 107 bits/cm2 on MnAlGe and MnGaGe due to grain noise and on GdCo due to domain stability. Wavelength limited resolution appears obtainable on MnBi and TeGeAs although reversibility limitations exist. PtCo seems capable of exceeding 108 bits/cm2 at data rates of 50 M bits/sec.
© 1974 Optical Society of America
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