Abstract
In this study, we theoretically investigate the strain effect on the orientation-dependent high-order harmonic generation (HHG) of monolayer aluminum nitride (AlN) by solving the multiband semiconductor Bloch equations in strong laser fields. Our simulations denote that the odd-even feature in the orientation-dependent high harmonic spectra owing to the strain is considerably different when compared with that in the case without strain. The enhanced quantum interference between different energy bands in strained AlN around the Γ-M direction is responsible for the observed odd-even distributions of the orientation-dependent HHG.
© 2020 The Author(s)
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