Abstract
InGaN/GaN micro-light-emitting diodes with the highest bandwidths at very high temperatures (3.2 GHz at 290°C) are demonstrated. Differential carrier lifetime analysis is undertaken to understand recombination-related effects on the modulation response.
© 2024 The Author(s)
PDF ArticleMore Like This
Zhiwei Rao, Xinyi Shan, Yue Liao, Zuxin Jin, Runze Lin, Xugao Cui, Ran Liu, and Pengfei Tian
Tu2K.7 Optical Fiber Communication Conference (OFC) 2024
Xiao Meng, Lai Wang, Jiadong Yu, Zhibiao Hao, and Yi Luo
ATh3A.215 Asia Communications and Photonics Conference (ACP) 2014
Abbas Sabbar, Syam Madhusoodhanan, Huong Tran, Binzhong Dong, Jiangbo Wang, Alan Mantooth, Shui-Qing Yu, and Zhong Chen
JTh2D.16 CLEO: Applications and Technology (CLEO:A&T) 2020