Abstract
A 44×36-pixel 3D CMOS image sensor is developed based on the Time-Of-Flight (TOF) scheme where N-well_P-substrate photodiodes with a large breakdown voltage are adopted. Additionally, the breakdown voltages of photodiodes are well explored with consideration of crosstalk. This image sensor includes photodiodes, pixel sensing circuits, sense amplifiers, pixel-activated decoders, Time-to-Digital Converters (TDC) and a TDC readout unit. A negative feedback mechanism in pixel sensing circuits is used to accelerate sensing response. The bus-shared topology is employed to minimize the overhead of parallel reading. By using the TSMC 0.35μm CMOS technology, a 44×36-pixel 3D image sensor was successfully implemented to have detection speed of 32ns and depth resolution up to 4 cm.
© 2013 IEICE
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