Abstract
We demonstrate an amorphous silicon carbide (a-SiC) microresonator with optical Q up to 1.3 ×105. This enables us to characterize the third-order nonlinearity of a-SiC with n2 = (5.9 ± 0.7) ×10−15 cm2/W in the telecom band.
© 2015 Optical Society of America
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