Abstract
Sn2P2S6 is ail attractive material for the realization of low voltage electro-optical applications since it has large electrooptic coefficients 170 pm/cm2 at λ = 633 nm and low dispersion in the infrared with a large transparency range from 0.53 to 8 μm. It is a promising material for fast hologram recording in the infrared. In Sn2P2S6 crystals the band-gap energy is 2.3 eV which corresponds to visible green light, while in conventional photorefractive oxides the wavelength for band-to-band excitation corresponds to UV light. Therefore Sn2P2S6 is an attractive candidate for interband photorefraction in the visible due the wide variety of laser sources and optics available in the visible spectra. Major advantages of interband photorefraction, compared with the conventional photorefractive effect, are faster response times and a greater robustness of the induced gratings with respect to sub-bandgap illumination. We investigate interband photorefractive effects in Sn2P2S6 for dynamic holography and light-induced waveguides.
© 2007 IEEE
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