Abstract
The photonic-crystal (PC) vertical-cavity surface-emitting diode lasers (VCSELs) are very perspective light sources for the telecommunication applications since they are expected to provide single mode operation, significant reduction of the threshold current comparing to the oxide VCSELs and to allow for the creation of the strong optical confinement in the unoxidized materials. The theoretical study presented here is based on the Plane Wave Admittance Method [1]. The approach allows for fully vectorial, three-dimensional analysis of the photonic devices with the PC incorporated. Our aim is the design optimization ensuring the best laser performance with maximal reduction of technological effort. Since the most challenging task is reaching relatively deep etching of the PC, hence our study is focused on the reduction of that depth and its optimization with respect to the other PC parameters such as the distance between the holes (/.) and the holes diameter (a). The bottom-emitting concept considered here has been proven as more effective than the typical top emitting geometry [2], The advantage lies in the much better beam quality achieved with bottom- emitting PC VCSELs. The presented study concerns 1.3 pm PC VCSEL structure. The current funneling is realized by partially proton-bombarded tunnel junction.
© 2007 IEEE
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