Abstract
Oxide single crystals doped whh Cr4' are well known as materials for tunable IR lasing and Q-switching. Their growth by liquid phase (LPE) epitaxy method on substrates of generating crystal allows to simplify the production and assembling of microlasers as well as results in reducing of their price, This work represents the first results on growth and characterization of cpiaxial layers of gadolinium gallium garnet (GGG) co-doped with Mg21 and Cr41.
© 2000 IEEE
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