Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CTuY4

Spatial Characterization of Germanium-on-Silicon C-Band PIN Photodiodes

Not Accessible

Your library or personal account may give you access

Abstract

Spatially-resolved photoresponse and modulation measurements of vertically- illuminated germanium-on-silicon photodiodes are presented. It is shown that, even in a planar device, localized traps at the perimeter limit both quantum efficiency and modulation bandwidth.

© 2007 Optical Society of America

PDF Article
More Like This
Rapid melt grown Germanium p-i-n photodiode wrapped around a Silicon waveguide

Ryan Going, Tae Joon Seok, and Ming C. Wu
STu3G.2 CLEO: Science and Innovations (CLEO:S&I) 2014

Ge-implantation-enhanced defect-state absorption in C-band silicon waveguide photodiode monitors

Yue Niu and Andrew W. Poon
SM4G.4 CLEO: Science and Innovations (CLEO:S&I) 2023

Germanium Quantum-Well Photonic Devices on Silicon

David A. B. Miller
ITuE1 Integrated Photonics and Nanophotonics Research and Applications (IPR) 2007

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.