Abstract
InGaAsN/GaAsSb ‘W’ type-II strain compensated quantum well lasers on GaAs substrates are grown by MOCVD. Preliminary lasers with 3-stage active regions exhibit emission that is blue-shifted from the PL, due to charge separation and higher-energy transitions.
© 2006 Optical Society of America
PDF ArticleMore Like This
I. Vurgaftman, J. R. Meyer, N. Tansu, and L. J. Mawst
CTuJ6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004
Zoe C. M. Davidson, Judy M. Rorison, Stephen J. Sweeney, and Christopher A. Broderick
CTuP11F_02 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2022
O. Blum, W.W. Chow, J.F. Klem, and H.C. Schneider
CTuO5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001