Abstract
The threshold and spectral characteristics of patterned quantum dot lasers fabricated by selective area MOCVD crystal growth are presented. Full three-dimensional confinement of carriers in an engineered quantum structure is demonstrated.
© 2005 Optical Society of America
PDF ArticleMore Like This
V. C. Elarde, R. B. Swint, T. S. Yeoh, and J. J. Coleman
CTuM3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004
Jianxin Cai, Yonglin Gu, Xiaoming Ji, Jingzhou Yan, Guoyun Ru, Liwei Cheng, Fow-Sen Choa, and Jenyu Fan
CMFF2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2005
J. J. Coleman, V. C. Elarde, and V. B. Verma
IWE1 Integrated Photonics and Nanophotonics Research and Applications (IPR) 2008