Abstract
In this paper we report for the first time to our knowledge, the high-power, diffraction-limited operation of flared amplifiers fabricated in the InGaAsP/GaAs material system. The flared amplifiers in this work emit at 780 nm and operate in a single-diffraction-limited-lobe far-field pattern to 1.26 W cw and to 2.4 W under quasi-cw conditions. Previously reported flared amplifiers have been based on the GaAs/AlGaAs and InGaAs/GaAs material systems at wavelengths between 860 and 1020 nm.1-4 However, at shorter wavelengths the fabrication of monolithic photonic integrated circuits, such as MOPAs, is complicated by the presence of Al-containing cladding layers. Recently, the InGaAsP/GaAs material system has been the subject of considerable development, demonstrating high incoherent powers at 810 nm5-7 In this paper we describe, what we believe to be the first use of InGaAsP/GaAs materials in flared amplifiers and the first demonstration of >1-W-cw diffraction-limited output power in the 780-nm-wavelength regime.
© 1995 Optical Society of America
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