Abstract
A monolithically integrated DFB or DBR laser/electroabsorption (EA) modulator light source is becoming important for use in high speed lightwave communication systems because of its low wavelength-chirp characteristics. In order to integrate the EA modulator and active elements (lasers or amplifiers), butt coupling,1 as well as stacking the two waveguide layers,2 has been used. Recently, a novel integration technique by using selective area MOVPE has been developed.3,4 Nonplanar epitaxy on ridges or in channels is another candidate for lateral bandgap control.5,6
© 1994 Optical Society of America
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