Abstract
The laser-controlled photoelectrochemical etching of GaAs/AlGaAs heterostructures was used to fabricate a variety of passive guided-wave structures. In this process an Argon-ion laser beam at 514 nm is focused to a 2 µm spot onto the sample surface, which is uniformly covered with an electrolyte. This initiates an electrochemical reaction that results in the local dissolution of the material. Any desired etched structure can be made by moving the sample in any pattern below the fixed laser spot. Typically, HNO3:H2O∷1:20 and HCI:HNO3; H2O∷4:1:50 solutions were used to etch GaAs.
© 1991 Optical Society of America
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