Abstract
Direct writing of conductive lines by laser chemical vapor deposition (CVD) is expected to be useful for microdevice interconnection formation because of its flexibility and high speed. Some pioneering work has been reported on direct writing for device fabrication1 and for gate-array customization.2 Recently, rapid maskless circuit correction technology has been developed for MOS LSIs with a commonly adopted two-level multilayered interconnection structure using Mo CVD from Mo(CO)e gas.3 For such multilayered interconnection restructuring, the written line should have high conductivity and low resistivity contact to an Al interconnection through a via hole. Higher allowable current density through the contact portion is also required for use in higher speed or higher current microdevices such as bipolar and linear LSIs. To meet these conditions, CVD gas selection is one of the most important factors. From practical points of view, such as safety and anti-corrosion, Mo(CO)6 or W(CO)6 is generally selected as the CVD source gas. Recently, directly written W from W(CO)6 gas has been reported to have substantially low resistivity.4
© 1988 Optical Society of America
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