GaN Based Active Matrix Light Emitting Diode Array by Flip-Chip Technology

Zhao Jun Liu; Chi Wing Keung; Kei May Lau

doi:10.1364/AOE.2008.SaO3

Asia Optical Fiber Communication and Optoelectronic Exposition and Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper SaO3
•https://doi.org/10.1364/AOE.2008.SaO3

GaN Based Active Matrix Light Emitting Diode Array by Flip-Chip Technology

Zhao Jun Liu, Chi Wing Keung, and Kei May Lau

Asia Optical Fiber Communication and Optoelectronic Exposition and Conference 2008

Shanghai China
30 October–2 November 2008
ISBN: 978-1-55752-863-6

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Solid-State Lighting (SaO)

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Z. J. Liu, C. W. Keung, and K. M. Lau, "GaN Based Active Matrix Light Emitting Diode Array by Flip-Chip Technology," in Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper SaO3.

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Abstract

This paper reports the first GaN based active matrix light emitting diode (AMLED) array. The array, fabricated by CMOS compatible process and flip-chip technology, can control the LED pixel individually and exhibit excellent emission uniformity.

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